 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| (R) BUL128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE TO-220 3 1 2 APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature o Value 700 400 9 4 8 2 4 70 -65 to 150 150 Uni t V V V A A A A W o o C C November 1998 1/7 BUL128D-B THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO V EBO V CEO(sus) V CE(sat ) Parameter Collector Cut-off Current (V BE = -1.5 V) Collector Cut-off Current (I B = 0) Emitter-Base Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Test Cond ition s V CE = 700 V V CE = 700 V V CE = 400 V I E = 10 mA I C = 100 mA IC IC IC IC = = = = 0.5 A 1A 2.5 A 4A L = 25 mH IB IB IB IB = = = = 0.1 A 0.2 A 0.5 A 1A 9 400 0.7 1.0 1.5 0.5 1.1 1.2 1.3 10 8 40 2.5 IC = 2 A V BE(o ff) = -5 V L = 200 H IC = 2 A IB2 = -0.4 A (see fig.2) 0.6 0.1 V s s Tj = 125 oC Min. Typ . Max. 100 500 250 Un it A A A V V V V V V V V V V BE(s at) Base-Emitt er Saturation Voltage DC Current Gain Forward Voltage Drop INDUCTIVE LO AD Storage Time F all Time RESISTIVE LO AD Storage Time Fall Time I C = 0.5 A IC = 1 A I C = 2.5 A I C = 10 mA IC = 2 A If = 2 A V CC = 200 V I B1 = 0.4 A R BB = 0 (see fig.1) V CC = 250 V I B1 = 0.4 A T p = 30 s IB = 0.1 A I B = 0.2 A IB = 0.5 A V CE = 5 V V CE = 5 V h F E Vf ts tf ts tf 2 0.2 2.9 s s Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/7 BUL128D-B Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BUL128D-B Inductive Fall Time Inductive Storage Time Resistive Load Fall Time Resistive Load Storage Time Reverse Biased SOA 4/7 BUL128D-B Figure 1: Inductive Load Switching Test Circuits. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuits. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BUL128D-B TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 6/7 BUL128D-B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 7/7 |
Price & Availability of BUL128D-B
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |